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| ==Oxidation== | | ==Oxidation== |
| At Danchip we have seven furnaces for oxidation: A1, A2, A3, C1, C3, D1 and nobel. Oxidation can take place either by a dry process or a wet process. The film quality of dry oxide is better than for wet oxide with regards to density and dielectric constant. | | At Danchip we have seven furnaces for oxidation: A1, A2, A3, C1, C3, D1 and Nobel. Oxidation can take place either by a dry process or a wet process. The film quality of dry oxide is better than for wet oxide with regards to density and dielectric constant. |
| If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. | | If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. |
| *Dry oxide is used from 5 nm - 200 nm. Can be grown in furnaces: A1, A2, A3, C1, C3. | | *Dry oxidation is used from 5 nm - 200 nm. Can be grown in furnaces: A1, A2, A3, C1, C3. |
| *Wet oxide with O<sub>2</sub> and H<sub>2</sub> can be grown in furnace: A1, A3. | | *Wet oxidation is used up to 4 µm can be grown in furnace: A1, A3. |
| *Wet oxide with H<sub>2</sub>O in a bubbler can be grown in furnaces: C1, C3, D1, nobel. | | *Very thick oxide >4 µm can be grown in D1. |
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| The standard recipes, quality control limits and results for the Boron Drive-in and Phosphorus Drive-in furnaces can be found here: | | The standard recipes, quality control limits and results for the Boron Drive-in and Phosphorus Drive-in furnaces can be found here: |
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| ==Comparison of the six oxidation furnaces== | | ==Comparison of the six oxidation furnaces== |
| {| {{table}} border="2" cellspacing="0" cellpadding="8" width="1000pt"
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| | valign="top" align="center" style="background:#f0f0f0;"|''''''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''A2 <br />Gate oxide'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''D1 <br />APOX'''
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| | valign="top" align="center" style="background:#f0f0f0;"|'''Noble'''
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| |-valign="top"
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| ! General description
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| |Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation and annealing of wafers from the B-stack and PECVD1. At the moment also used for general oxidation of 6" wafers.||Oxidation of gate-oxide and other especially clean oxides.||Oxidation and annealing of wafers from NIL.||Oxidation of very thick oxides||Oxidation and annealing for all materials.
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| |-
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| ! Dry oxidation
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| |x||x||x||x(with special permission)||x||.||x (after request)
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| |-
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| !wet oxidation with torch (H<sub>2</sub>+O<sub>2</sub>)
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| |x||x||.||.||.||.||.
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| |-
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| !Wet oxidation with bubbler (water steam + O<sub>2</sub>)
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| |.||.||x||.||x||x||x after request
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| |-
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| !Process temperature [ <sup>o</sup>C ]
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| |800-1150||800-1150 ||800-1150||800-1150||800-1150||1075||.
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| |-
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| !Cleanliness of dry oxide (rated 1-5, 1 is best)
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| |2||2||3||1||4||.||>5
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| |-
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| !Cleanliness of wet oxide (rated 1-5, 1 is best)
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| |1||1||2||.||4||3||>5
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| |-valign="top"
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| ! Batch size
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| |max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 200 4"|| max. 30 wafers
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| |-valign="top"
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| !style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:
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| | align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in'''
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| | align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
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| | align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
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| | align="center" style="background:#f0f0f0;"|'''A2 <br />Gate oxide'''
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| | align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
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| | align="center" style="background:#f0f0f0;"|'''D1 <br />APOX'''
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| | align="center" style="background:#f0f0f0;"|'''Noble'''
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| |-
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| | RCA clean* Si wafers with no history of Metals on||x||x||x||x (with special permission)||x||.||x
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| |-
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| | From Predep furnace directly (e.g. incl. Predep HF*)||From A1||From A4||x||.||x||.||x
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| |-
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| | Wafers directly from PECVD2||.||.||x||.||x||.||x
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| |-
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| | Wafers directly from NIL bonding||.||.||.||.||x||.||x
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| |-
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| |All materials must enter the furnace||.||.||.||.||.||.||x
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| |-
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| |}
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| <nowiki>*</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
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| {|border="1" cellspacing="1" cellpadding="7" style="text-align:left;" | | {|border="1" cellspacing="1" cellpadding="7" style="text-align:left;" |
