Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions
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|Depending on process parameters, see [[/Sputtering of TiW in Wordentec|here.]] | |Depending on process parameters, see [[/Sputtering of TiW in Wordentec|here.]] | ||
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| TiW alloy: 10%/90% by weight | |||
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Revision as of 12:19, 10 March 2014
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Deposition of TiW alloy can take place in the Wordentec. Observe: right now we don´t have a TiW target for Wordentec, please contact thinfilm@danchip.dtu.dk if you are interested in depositing TiW.
| Sputter deposition (Wordentec) | |
|---|---|
| Batch size |
|
| Pre-clean | RF Ar clean |
| Layer thickness | . |
| Allowed substrates |
|
| Allowed materials |
|
| Deposition rate | Depending on process parameters, see here. |
| Comments | TiW alloy: 10%/90% by weight |
Deposited rates
This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see here) and may change with these settings.
Deposited film characteristics
AFM pictures show how the surface roughness is dependent of the process parameters, this can be seen here.