Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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|Etch rate
|Etch rate
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~10-20 nm/min  
~40-100 nm/min  
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~10-20 nm/min
~10-20 nm/min

Revision as of 15:47, 17 January 2008

Etching of Chromium

Etching of chromium is done wet at Danchip. We have two solution for this:

  1. HNO:HO:cerisulphate - 90ml:1200ml:15g
  2. Commercial chromium etch

Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)


Chromium etch 1 Chromium etch 2
General description

Etch of chromium

Etch of chronium

Chemical solution HNO:HO:cerisulphate - 90ml:1200ml:15g Commercial chromium etch

CE 8002-A

Process temperature Room temperature Room temperature
Possible masking materials:

Photoresist (1.5 µm AZ5214E)

Photoresist (1.5 µm AZ5214E)

Etch rate

~40-100 nm/min

~10-20 nm/min

Batch size

1-25 wafers at a time

1-25 wafer at a time

Size of substrate

4" wafers

4" wafers

Allowed materials
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist