Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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| | |Drive-in of boron deposited in the boron pre-dep furnace(A1) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation. | ||
| | |Oxidation of gate-oxide and other especially clean oxides. | ||
| | |Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation. | ||
| | |Oxidation and annealing of wafers from the LPCVD furnaces and PECVD1. At the moment also used for general oxidation of 6" wafers. | ||
| | |Oxidation and annealing of wafers from NIL. | ||
| | |Oxidation of very thick oxides | ||
| | |Oxidation and annealing for all materials. | ||
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The curves below are based on measurements in our specific furnaces and give more accurate results. | The curves below are based on measurements in our specific furnaces and give more accurate results. | ||
<gallery caption="Wet oxidation" widths="400px" heights="300px" perrow="2"> | |||
image:A1_furnace_100_Si_wet_oxidation.jpg|A1 Furnace <100>-Si Wet Oxidation | |||
image:A3_furnace_100_Si_wet_oxidation.jpg|A3 Furnace <100>-Si Wet Oxidation | |||
</gallery> | |||
===A1 Furnace <100>-Si Wet Oxidation=== | ===A1 Furnace <100>-Si Wet Oxidation=== | ||