Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions
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|HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g | |HNO<math>_3</math>:H<math>_2</math>O:cerisulphate - 90ml:1200ml:15g | ||
|Commercial chromium etch | |Commercial chromium etch | ||
CE 8002-A | |||
|- | |- | ||
|Process temperature | |Process temperature | ||
Revision as of 15:25, 17 January 2008
Etching of Chromium
Etching of chromium is done wet at Danchip. We have two solution for this:
- HNO:HO:cerisulphate - 90ml:1200ml:15g
- Commercial chromium etch
Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)
| Chromium etch 1 | Chromium etch 2 | |
|---|---|---|
| General description |
Etch of chromium |
Etch of chronium |
| Chemical solution | HNO:HO:cerisulphate - 90ml:1200ml:15g | Commercial chromium etch
CE 8002-A |
| Process temperature | Room temperature | Room temperature |
| Possible masking materials: |
Photoresist (1.5 µm AZ5214E) |
Photoresist (1.5 µm AZ5214E) |
| Etch rate |
~1-2 nm/min (Pure Al) |
~60(??) nm/min |
| Batch size |
1-25 wafers at a time |
1-25 wafer at a time |
| Size of substrate |
4" wafers |
4" wafers |
| Allowed materials |
|
|