Specific Process Knowledge/Thin film deposition/Deposition of Tin: Difference between revisions
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{| border="1" cellspacing="0" cellpadding=" | {| border="1" cellspacing="0" cellpadding="3" | ||
|-style="background:silver; color:black" | |||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
|- | |- | ||
| Batch size | |-style="background:WhiteSmoke; color:black" | ||
! Batch size | |||
| | | | ||
*Up to 1x4" wafers | *Up to 1x4" wafers | ||
*smaller pieces | *smaller pieces | ||
|- | |- | ||
| Pre-clean | |-style="background:LightGrey; color:black" | ||
!Pre-clean | |||
|RF Ar clean | |RF Ar clean | ||
|- | |- | ||
| Layer thickness | |-style="background:WhiteSmoke; color:black" | ||
|10Å to 1µm | !Layer thickness | ||
|10Å to 1µm* | |||
|- | |- | ||
| Deposition rate | |-style="background:LightGrey; color:black" | ||
! Deposition rate | |||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |||
!Allowed materials | |||
| | |||
* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
|-style="background:LightGrey; color:black" | |||
! Comment | |||
| | |||
|} | |} | ||
'''*''' ''For thicknesses above 200 nm permission is required.'' | |||
Revision as of 08:58, 10 March 2014
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Tin can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | |
|---|---|
| Batch size |
|
| Pre-clean | RF Ar clean |
| Layer thickness | 10Å to 1µm* |
| Deposition rate | 2Å/s to 15Å/s |
| Allowed materials |
|
| Comment |
* For thicknesses above 200 nm permission is required.