Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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|Etch rate
|Etch rate
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|
~100 nm/min (Pure Al)
~1-2 nm/min (Pure Al)
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|
~60(??) nm/min
~60(??) nm/min

Revision as of 14:25, 17 January 2008

Etching of Chromium

Etching of chromium is done wet at Danchip. We have two solution for this:

  1. HNOFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} :HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} O:cerisulphate - 90ml:1200ml:15g
  2. Commercial chromium etch

Etch rate 400-1000 Å/min (depending on the level of oxidation of the metal)


Chromium etch 1 Chromium etch 2
General description

Etch of chromium

Etch of chronium

Chemical solution HNOFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} :HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} O:cerisulphate - 90ml:1200ml:15g Commercial chromium etch
Process temperature Room temperature Room temperature
Possible masking materials:

Photoresist (1.5 µm AZ5214E)

Photoresist (1.5 µm AZ5214E)

Etch rate

~1-2 nm/min (Pure Al)

~60(??) nm/min

Batch size

1-25 wafers at a time

1-25 wafer at a time

Size of substrate

4" wafers

4" wafers

Allowed materials
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist