Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions

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|10Å to 500 Å
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'''*'''  ''For thicknesses above 200 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required.''

Revision as of 13:12, 7 March 2014

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Molybdenum deposition

Molybdenum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment. In PVD co-sputter/evaporation only VERY thin layers of Mo can be deposited.


E-beam evaporation (Alcatel) E-beam evaporation (PVD co-sputter/evaporation)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 12x2" wafers or
  • 12x4" wafers or
  • 4x6" wafers
Pre-clean RF Ar clean RF Ar clean
Layer thickness 10Å to 0.5 µm* 10Å to 500 Å
Deposition rate 2Å/s to 15Å/s About 1 Å/s
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
Comment Only very thin layers (up to 100nm).


* For thicknesses above 200 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required.