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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,324 edits
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![[Specific Process Knowledge/Thin film deposition/Deposition of Silicon oxide in PVD co-sputter/evaporation|PVD co-sputter/evaporation tool]]
![[Specific Process Knowledge/Thin film deposition/Deposition of Silicon oxide in PVD co-sputter/evaporation|PVD co-sputter/evaporation tool]]
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
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|Generel description - method 1
|Generel description - method 1
|Generel description - method 2
|Generel description - method 2
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*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used
*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used
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*
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Film thickness
!Film thickness range
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*~300nm - 4µm
*~300nm - 4µm
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*~10nm - ~1µm(>2h)
*~10nm - ~1µm(>2h)
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*
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*Expected to be below 100<sup>o</sup>C
*Expected to be below 100<sup>o</sup>C
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*
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*Not Known
*Not Known
*Deposition on one side of the substrate
*Deposition on one side of the substrate
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*
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*
*
|*
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*1 150 mm wafer
*1 150 mm wafer
*1 200 mm wafer
*1 200 mm wafer
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*
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*Almost any material
*Almost any material
*not Pb and very poisonous materials
*not Pb and very poisonous materials
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*
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