Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
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| Layer thickness | | Layer thickness | ||
|10Å to | |10Å to 5000Å | ||
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| Deposition rate | | Deposition rate | ||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
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!Allowed materials | |||
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* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
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!Comments | |||
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Revision as of 08:52, 7 March 2014
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Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | |
|---|---|
| Batch size |
|
| Pre-clean | RF Ar clean |
| Layer thickness | 10Å to 5000Å |
| Deposition rate | 2Å/s to 15Å/s |
| Allowed materials |
|
| Comments |