Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions
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* 4x6" wafers or | * 4x6" wafers or | ||
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* | * 12x2" wafers | ||
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!Layer thickness | !Layer thickness | ||
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10Å to 1µm | 10Å to 1µm* | ||
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Depending on [[Specific Process Knowledge/Thin film deposition/Multisource PVD/Cu|process parameters]] | Depending on [[Specific Process Knowledge/Thin film deposition/Multisource PVD/Cu|process parameters]] | ||
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!Allowed materials | |||
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* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
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* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
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! Comment | |||
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'''*''' ''To deposit layers thicker then 200 nm permission is required (contact Thin film group)'' | |||
== Studies of Cu deposition processes == | == Studies of Cu deposition processes == | ||
Revision as of 08:45, 7 March 2014
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Deposition of Cu
Copper can be deposited by e-beam evaporation or sputtering . In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | Sputter deposition (PVD co-sputter/evaporation) | |
|---|---|---|
| Batch size |
|
|
| Pre-clean | RF Ar clean | RF Ar clean |
| Layer thickness | 10Å to 0.5µm* |
10Å to 1µm* |
| Deposition rate | 2Å/s to 15Å/s |
Depending on process parameters |
| Allowed materials |
|
|
| Comment |
* To deposit layers thicker then 200 nm permission is required (contact Thin film group)
Studies of Cu deposition processes
Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel
Cu sputtering in (PVD co-sputter/evaporation)
Process parameters are listed here: Cu sputter in PVD co-sputter/evaporation