Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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 |-style="background:WhiteSmoke; color:black"
 !Film thickness
+|
+*~300nm - 4µm
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+*~40nm - 30µm
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+*Thin layers (up to 300-400 nm)
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+*~10nm - ~1µm(>2h)
+|-
+|-style="background:LightGrey; color:black"
+!Process Temperature
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+*725 <sup>o</sup>C
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+*300 <sup>o</sup>C
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+*Can be between room temp. and 400 <sup>o</sup>C
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+*Expected to be below 100<sup>o</sup>C
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!2
+|
+*~300nm - 4µm
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+*~40nm - 30µm
+|
+*Thin layers (up to 300-400 nm)
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+*~10nm - ~1µm(>2h)
+|-
+|-style="background:LightGrey; color:black"
+!3
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+*SiO<sub>2</sub>
+Can be doped with boron
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+*Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub>
+Can be doped with boron, phosphorus or germanium
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+*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used)
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+*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used
+|-
+|-
+|-style="background:WhiteSmoke; color:black"
+!4
 |
 *~300nm - 4µm