Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions
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|Depending on process parameters, see [[Sputtering of Cr in Wordentec|here.]] | |Depending on process parameters, see [[Sputtering of Cr in Wordentec|here.]] | ||
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* Silicon | |||
* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
* Metals | |||
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* Silicon | |||
* Silicon oxide | |||
* Silicon nitride | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
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* Silicon | |||
* Silicon oxide | |||
* Silicon nitride | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
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* Silicon | |||
* Silicon oxide | |||
* Silicon nitride | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
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Revision as of 16:12, 6 March 2014
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Chromium deposition
Chromium can be deposited by e-beam evaporation. It should be noted that Chromium does not melt but evaporates directly from the solid phase. Chromium can be sputter deposited aswell. In the chart below you can compare the different deposition equipment.
E-beam evaporation (Alcatel) | E-beam evaporation (Wordentec) | E-beam evaporation (PVD co-sputter/evaporation) | Sputter deposition (Wordentec) | |
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Batch size |
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Pre-clean | RF Ar clean | RF Ar clean | RF Ar clean | RF Ar clean |
Layer thickness | 10Å to 1µm* | 10Å to 1µm* | 10Å to 1000 Å | . |
Deposition rate | 2Å/s to 15Å/s | 10Å/s to 15Å/s | About 1Å/s | Depending on process parameters, see here. |
Allowed materials |
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Comment | Only very thin layers (up to 100nm). |
* For thicknesses above 200 nm permission from ThinFilm group is required.
Studies of Cr deposition processes
Uniformity of Cr layers - Uniformity of Cr layers deposited with different methods and settings
Sputtering of Cr in Wordentec - Settings and deposition rates