Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions

Revision as of 17:01, 6 March 2014

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Titanium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Alcatel)	E-beam evaporation (Wordentec)	E-beam evaporation (PVD co-sputter/evaporation)	Sputter deposition (Wordentec)
Batch size	Up to 1x4" wafers smaller pieces	24x2" wafers or 6x4" wafers or 6x6" wafers	12x2" wafers or 12x4" wafers or 4x6" wafers	24x2" wafers or 6x4" wafers or 6x6" wafers
Pre-clean	RF Ar clean	RF Ar clean	RF Ar clean	RF Ar clean
Layer thickness	10Å to 1µm*	10Å to 1 µm*	10Å to 1000Å	.
Deposition rate	2Å/s to 15Å/s	10Å/s to 15Å/s	About 1Å/s	Depending on process parameters, see here.
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers	Silicon wafers Quartz wafers Pyrex wafers	Silicon wafers Quartz wafers Pyrex wafers	Silicon wafers Quartz wafers Pyrex wafers
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Comment			Only very thin layers (up to 100nm).

* For thicknesses above 200 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required.

@@ Line 43: / Line 43: @@
 |-style="background:WhiteSmoke; color:black"
 ! Layer thickness
-|10Å to 1µm
+|10Å to 1µm*
-|10Å to 1 µm
+|10Å to 1 µm*
 |10Å to 1000Å
 |.
@@ Line 123: / Line 123: @@
 |}
+'''*'''  ''For thicknesses above 200 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required.''
 == Comments: Choise of equipment ==