Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions

Revision as of 15:08, 6 March 2014

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Deposition of TiW alloy can take place in the Wordentec. Observe: right now we don´t have a TiW target for Wordentec, please contact thinfilm@danchip.dtu.dk if you are interested in depositing TiW.

	Sputter deposition (Wordentec)
Batch size	24x2" wafers or 6x4" wafers or 6x6" wafers
Pre-clean	RF Ar clean
Layer thickness	.
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Deposition rate	Depending on process parameters, see here.

Deposited rates

This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see here) and may change with these settings.

Deposited film characteristics

AFM pictures show how the surface roughness is dependent of the process parameters, this can be seen here.

@@ Line 12: / Line 12: @@
 ! Sputter deposition (Wordentec)
 |-style="background:WhiteSmoke; color:black"
-| Batch size
+! Batch size
 |
 *24x2" wafers or
@@ Line 19: / Line 19: @@
 |-style="background:LightGrey; color:black"
-| Pre-clean
+! Pre-clean
 |RF Ar clean
 |-style="background:WhiteSmoke; color:black"
-| Layer thickness
+! Layer thickness
 |.
-|-style="background:LightGrey; color:black"
-| Deposition rate
+|-style="background:LightGrey;  color:black"
+!Allowed materials
+|
+* Silicon oxide
+* Silicon (oxy)nitride
+* Photoresist
+* PMMA
+* Mylar
+* SU-8
+* Metals
+|-style="background:WhiteSmoke; color:black"
+! Deposition rate
 |Depending on process parameters, see [[/Sputtering of TiW in Wordentec|here.]]
 |-