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Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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<nowiki>*</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
<nowiki>*</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
==Comparison method 1 and method 2 for the process==
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
!
|'''A1: Boron Drive-in'''
|'''A2: Gate Oxide'''
|'''A3: Phosphorous Drive-in'''
|'''C1: Anneal Oxide'''
|'''C3: Anneal Bond'''
|'''D4: APOX'''
|'''Noble furnace'''
|-
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Generel description - method 1
|Generel description - method 2
|Generel description - method 3
|Generel description - method 4
|Generel description - method 5
|Generel description - method 6
|Generel description - method 7
|-
|-
|-style="background:LightGrey; color:black"
!Parameter 1
|
*A
*B
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*A
*B
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|-
|-
|-style="background:WhiteSmoke; color:black"
!Parameter 2
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*A
*B
*C
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*A
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|-
|-
|-style="background:LightGrey; color:black"
!Substrate size
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*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
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|
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|-
|-
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|
*Allowed material 1
*Allowed material 2
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*Allowed material 1
*Allowed material 2
*Allowed material 3
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|-
|}
<br clear="all" />


==Oxidation curves==
==Oxidation curves==