Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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 !Sputter technique using [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]]
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-| Stoichiometry
+| Stochiometry
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 *SiO<sub>2</sub>
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 |-
 |-style="background:LightGrey; color:black"
-!Parameter 1
+!Stochiometry
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-*A
+*SiO<sub>2</sub>
-*B
+Can be doped with boron
-|
-*A
-*B
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+*Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub>
+Can be doped with boron, phosphorus or germanium
+|
+*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used)
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+*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used
 |-