Specific Process Knowledge/Lithography/NanoImprintLithography: Difference between revisions

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==EVG NIL==
==EVG NIL==
[[Image:EVG NIL.jpg|200 × 200px|thumb|right|The EVG NIL is positioned in Cleanroom 4.]]
[[Image:EVG NIL.jpg|300 × 300px|thumb|right|The EVG NIL is positioned in C-4]]


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==Process information==
==Process information==
====Types of Bonding====
====Types of Bonding====

Revision as of 16:17, 5 March 2014

EVG NIL

The EVG NIL is positioned in C-4

Feedback to this section: EVG NIL click here

The EVG NIL is a system for imprinting in polymers (Hot Embossing), and for bonding on wafer scale. 3 different types of bonding can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. In principle it is also possible to align the substrate and stamp before imprint, but it is much more difficult.

It is possible to fill bonded cavities with a desired gas. At the moment we have SF6 on the system, but if you would like another one, please contact Rune Christiansen.


The user manual, user APV, and contact information can be found in LabManager



Process information

Types of Bonding

Imprint information


Overview of the performance of the EVG NIL and some process related parameters

Purpose Imprint and bonding
  • Eutectic bonding
  • Fusion bonding
  • Anodic bonding
  • Imprinting
Performance Alignment accuracy
  • ± 5 microns for IR alignment
  • ± 10 microns for backside alignment
Process parameter range Process Temperature
  • Room temperature to 500°C
Process pressure
  • ~510-4mbar - 2000mbar
Piston Force
  • Depending on the area, for 4" wafers 200-20000N.
Substrates Batch size
  • One 4" or 6" wafer per run
  • Pieces are only allowed with speciel permission
Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Poly Silicon
  • Photoresist
  • PMMA
  • TOPAS
  • SU-8
  • Metals: Au, Sn, Ag, Al, Ti.