Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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=Oven 250C= | =Oven 250C= | ||
[[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|250 degrees oven for pretreatment: positioned in | [[Image:Oven_250_degrees_for_pretreatment_cr3.jpg|300x300px|thumb|250 degrees oven for pretreatment: positioned in C-1]] | ||
The oven is typically used for pretreatment (dehydration) of Si and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, better during the night, and spin the resist on them asap. | The oven is typically used for pretreatment (dehydration) of Si and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, better during the night, and spin the resist on them asap. | ||