Specific Process Knowledge/Wafer cleaning: Difference between revisions

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==Comparison of Wafer Cleaning Methods==
==Comparison of Wafer Cleaning Methods==


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Revision as of 13:01, 3 March 2014

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Cleaning of wafers

During processing it is sometimes mandatory, necessary or just recommended to clean the wafers. This can be done by different cleaning procedures depending on what the wafers have been exposed to where they are going to be further processed. Please consult the cross contamination scheme for to see whether your wafers need a cleaning before the next processing sequence.


Comparison of Wafer Cleaning Methods

RCA 7-up & Piranha 5% HF IMEC Soap Sonic
Generel description Two step process to remove organics and metals Removes organics and alkali ions Removing native oxide Cleaning before wafer bonding Removing dust and particles
Purpose Mandatory prior furnace processes When needed and always after KOH etch and Nitride etch in Phosphoric acid. Sometimes mandatory before next processing step. Optional during RCA cleaning Recommended cleaning and treatment before wafer bonding Mandatory cleaning of very dirty items that enters the cleanroom. Should always be followed by a piranha clean.
Substrate size
  • #1-25 2", 4" and 6" wafers
  • #1-25 2", 4" and 6" wafers
  • #1-25 2", 4" and 6" wafers
  • #1-25 2" and 4" wafers
  • All sizes that can go into the bath
Allowed materials
  • Silicon
  • Poly Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Quartz/fused silica
  • Silicon
  • Poly Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Quartz/fused silica
  • Pyrex and wafers with Cr ONLY in Mask cleaning bath or beaker
  • Silicon
  • Poly Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxy-nitride
  • Quartz/fused silica
  • Resists (depending on bath)
  • Pyrex (depending on bath)
  • Silicon
  • Poly Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Quartz/fused silica
  • Pyrex
  • All materials