Specific Process Knowledge/Wafer cleaning/7-up & Piranha: Difference between revisions
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Always use one of these after KOH etch or hot phosphoric acid etch to remove alkali ions before further processing. 7-up and Piranha are also used as cleaning solutions '''after''' stripping resist. | Always use one of these after KOH etch or hot phosphoric acid etch to remove alkali ions before further processing. 7-up and Piranha are also used as cleaning solutions '''after''' stripping resist. | ||
[[Image:7-up_6inch.jpg|300x300px|right|thumb|7-up 6" in cleanroom D3. <br\> -Up to 25 wafers of 4" or 6" at a time.<br\> -Materials allowed: Silicon, Silicon | [[Image:7-up_6inch.jpg|300x300px|right|thumb|7-up 6" in cleanroom D3. <br\> -Up to 25 wafers of 4" or 6" at a time.<br\> -Materials allowed: Silicon, Poly Silicon, Silicon Oxide, Silicon Nitride, Silicon Oxynitride,Quartz/fused silica]] | ||
[[Image:7-up_Mask.jpg|300x300px|right|thumb|7-up for masks and glass wafers positioned in cleanroom D3:<br\> -Up to 25 glass wafers of 4" at a time or 4 masks.<br\> -Materials allowed: Silicon, Silicon | [[Image:7-up_Mask.jpg|300x300px|right|thumb|7-up for masks and glass wafers positioned in cleanroom D3:<br\> -Up to 25 glass wafers of 4" at a time or 4 masks.<br\> -Materials allowed: Silicon, Poly Silicon, Silicon Oxide, Silicon Nitride, Silicon Oxynitride, Quartz/fused silica, glass (Pyrex and Soda Lime), chromium]] | ||
<!-- [[Image:7-up_RR3.jpg|300x300px|right|thumb|7-up 4": positioned in cleanroom C1<br\> -Up to 19 wafers of 4" at a time.<br\> -Materials allowed: Silicon, Silicon oxide, Silicon nitride, PolySi]]--> | <!-- [[Image:7-up_RR3.jpg|300x300px|right|thumb|7-up 4": positioned in cleanroom C1<br\> -Up to 19 wafers of 4" at a time.<br\> -Materials allowed: Silicon, Silicon oxide, Silicon nitride, PolySi]]--> | ||