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Specific Process Knowledge/Wafer cleaning: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
Line 34: Line 34:
|Removing native oxide
|Removing native oxide
|Cleaning before wafer bonding
|Cleaning before wafer bonding
|Cleaning of "dirty" wafers when entering the cleanroom
|Removing dust and particles
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Line 41: Line 41:
!Purpose
!Purpose
|Mandatory prior furnace processes  
|Mandatory prior furnace processes  
|When needed
|When needed and always after KOH etch and Nitride etch in Phosphoric acid
|Together with RCA cleaning  
|Optional with RCA cleaning  
|Prior to wafer bonding  
|Cleaning before wafer bonding  
|Cleaning very dirty items  
|Cleaning very dirty items that enters the cleanroom.
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|-


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