Specific Process Knowledge/Wafer cleaning: Difference between revisions
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*[[/IMEC|IMEC]] - ''Cleaning before fusion bonding'' | *[[/IMEC|IMEC]] - ''Cleaning before fusion bonding'' | ||
*[[/Cleaning with Soap Sonic|Soap Sonic]] - ''Cleaning of "dirty" wafers when entering the cleanroom'' | *[[/Cleaning with Soap Sonic|Soap Sonic]] - ''Cleaning of "dirty" wafers when entering the cleanroom'' | ||
== [[Image:section under construction.jpg|70px]] Section under construction == | |||
==Comparison of Wafer Cleaning Methods== | |||
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![[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] | |||
![[Specific Process Knowledge/Wafer cleaning/7-up & Piranha|7-up & Piranha]] | |||
![[Specific Process Knowledge/Wafer cleaning/cleaning with HF|5% HF]] | |||
![[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]] | |||
![[Specific Process Knowledge/Wafer cleaning/Cleaning with Soap Sonic|Soap Sonic]] | |||
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|-style="background:WhiteSmoke; color:black" | |||
!Generel description | |||
|Two step process to remove organics and metals | |||
|Removes organics and alkali ions | |||
|Removing native oxide | |||
|Cleaning before wafer bonding | |||
|Cleaning of "dirty" wafers when entering the cleanroom | |||
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|-style="background:LightGrey; color:black" | |||
!Purpose | |||
|Mandatory prior furnace processes | |||
|When needed | |||
|Together with RCA cleaning | |||
|Prior to wafer bonding | |||
|Cleaning very dirty items | |||
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|-style="background:WhiteSmoke; color:black" | |||
!Substrate size | |||
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*<nowiki>#</nowiki>1-25 2", 4" and 6" wafers | |||
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*<nowiki>#</nowiki>1-25 2", 4" and 6" wafers | |||
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*<nowiki>#</nowiki>1-25 2", 4" and 6" wafers | |||
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*<nowiki>#</nowiki>1-25 2" and 4" wafers | |||
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*All sizes that can go into the bath | |||
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|-style="background:LightGrey; color:black" | |||
!Allowed materials | |||
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*Silicon | |||
*Poly Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Quartz/fused silica | |||
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*Silicon | |||
*Poly Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Quartz/fused silica | |||
*Pyrex and wafers with Cr ONLY in Mask cleaning bath or beaker | |||
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*Silicon | |||
*Poly Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxy-nitride | |||
*Quartz/fused silica | |||
*Resists (depending on bath) | |||
*Pyrex (depending on bath) | |||
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*Silicon | |||
*Poly Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Quartz/fused silica | |||
*Pyrex | |||
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*All materials | |||
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Revision as of 10:21, 3 March 2014
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Clean with:
- RCA - Two step process to remove organics and metals
- 7-up & Piranha - Removes organics and alkali ions
- 5% HF - Removing native oxide
- IMEC - Cleaning before fusion bonding
- Soap Sonic - Cleaning of "dirty" wafers when entering the cleanroom
Section under construction
Comparison of Wafer Cleaning Methods
RCA | 7-up & Piranha | 5% HF | IMEC | Soap Sonic | |
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Generel description | Two step process to remove organics and metals | Removes organics and alkali ions | Removing native oxide | Cleaning before wafer bonding | Cleaning of "dirty" wafers when entering the cleanroom |
Purpose | Mandatory prior furnace processes | When needed | Together with RCA cleaning | Prior to wafer bonding | Cleaning very dirty items |
Substrate size |
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Allowed materials |
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