Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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The filmquality of dryoxide is better than for wet oxide with regards to density and ? | The filmquality of dryoxide is better than for wet oxide with regards to density and ? | ||
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| align="center" style="background:#f0f0f0;"|'''''' | |||
| align="center" style="background:#f0f0f0;"|'''A1 Boron drive-in''' | |||
| align="center" style="background:#f0f0f0;"|'''A3 Phosphorous drive-in''' | |||
| align="center" style="background:#f0f0f0;"|'''C1 Gate oxide''' | |||
| align="center" style="background:#f0f0f0;"|'''C2 Anneal oxide''' | |||
| align="center" style="background:#f0f0f0;"|'''C3 Anneal bond''' | |||
| align="center" style="background:#f0f0f0;"|'''D1 APOX''' | |||
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| General describtion||Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ionimplanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ionimplanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6\" wafers.||Oxidation and annealing of wafers from the B-stack and PECVD1.||Oxidation and annealing of wafers from NIL.||Oxidation of very thick oxides | |||
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| Dry oxidation||x||x||x (with special permission)||x||x|| | |||
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| wet oxidation with torch (H2+O2)||x||x|||||||| | |||
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| Wet oxidation with bubler (water steam + N2)||||||x (with special permission)||x||x||x | |||
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| Process temperature||800-1150 C||800-1150 C||800-1150 C||800-1150 C||800-1150 C||1150 C | |||
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| Cleanliness of dry oxide (rated 1-4, 1 is best)||2||2||1||3||4|| | |||
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| Cleanliness of wet oxide (rated 1-4, 1 is best)||1||1||2||3||4||3 | |||
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| Batch size||max. 30 wafers of 4\" or 2\"||max. 30 4\" wafers or 2\" wafers||max. 30 wafers of 6\",4\" or 2\"||max. 30 4\" wafers or 2\" wafers||max. 30 4\" wafers or 2\" wafers||?50-75 | |||
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| Which wafers are allowed to enter the furnace: |||||||||||| | |||
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| New clean* Si wafers 4\" (6\" in C1)||x||x||x (with special permission)||x||x||x | |||
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| RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x|| | |||
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| From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4|||||||| | |||
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| Wafers directly from PECVD1||||||||x||x|| | |||
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| Wafers directly from NIL bonding||||||||||x|| | |||
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