Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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==Boron Drive-in + Pre-dep furnace (A1)== | ==Boron Drive-in + Pre-dep furnace (A1)== | ||
[[Image:A1.JPG|thumb|300x300px|Boron Drive-in + Pre-dep furnace (A1). Positioned in cleanroom | [[Image:A1.JPG|thumb|300x300px|Boron Drive-in + Pre-dep furnace (A1). Positioned in cleanroom B-1]] | ||
The Boron Drive-in + Pre-dep furnace (A1) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Boron pre-deposition takes place in the same furnace. The Boron Drive-in furnace can also be used to drive-in p-doped wafers which has been ion implanted. | The Boron Drive-in + Pre-dep furnace (A1) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Boron pre-deposition takes place in the same furnace. The Boron Drive-in furnace can also be used to drive-in p-doped wafers which has been ion implanted. | ||