Specific Process Knowledge/Etch/RIE (Reactive Ion Etch): Difference between revisions
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[[image:Cluster1a.jpg|200x200px|right|thumb|RIE1 (part of Cluster1) - positioned in cleanroom2]] | [[image:Cluster1a.jpg|200x200px|right|thumb|RIE1 (part of Cluster1) - positioned in cleanroom2]] | ||
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[[image:Cluster2x.jpg|200x200px|right|thumb|RIE2 (part of Cluster2)- positioned in | [[image:Cluster2x.jpg|200x200px|right|thumb|RIE2 (part of Cluster2)- positioned in clean room C-1]] | ||
At Danchip we have now two RIE's. RIE2 for etching silicon based materials, resist and polymers and one (III-V RIE) for etching III-V materials. Here only RIE2 will be described. | At Danchip we have now two RIE's. RIE2 for etching silicon based materials, resist and polymers and one (III-V RIE) for etching III-V materials. Here only RIE2 will be described. | ||