Specific Process Knowledge/Lithography/Baking: Difference between revisions
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==90 C 4" hotplate== | ==90 C 4" hotplate== | ||
[[Image:90_degrees_hotplate_cr3.jpg|200x200px|thumb|Hotplate 90 degrees: positioned in | [[Image:90_degrees_hotplate_cr3.jpg|200x200px|thumb|Hotplate 90 degrees: positioned in C-1]] | ||
Hotplate is mostly used for baking of single wafer at 90 deg. as a soft baking step after a spinning of photo resist. | Hotplate is mostly used for baking of single wafer at 90 deg. as a soft baking step after a spinning of photo resist. | ||
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