Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
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|''' | |'''AZ 5214E''' | ||
|Positive but can be | |Positive but can be reversed | ||
|[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | |[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | ||
|Can be used for both positive and reverse processes with resist thickness between 1 to 4um. | |Can be used for both positive and reverse processes with resist thickness between 1 to 4um. | ||
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|''' | |'''A 4562''' | ||
|Positive | |Positive | ||
|[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | |[http://www.azem.com/en/Products/Litho-technology/Photoresists.aspx AZ Electronic Materials] | ||
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|''' | |'''SU-8''' | ||
|Negative | |Negative | ||
|[http://microchem.com/Prod-SU82000.htm Microchem] | |[http://microchem.com/Prod-SU82000.htm Microchem] | ||
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|[[media:SU-8_DataSheet_2005.pdf|SU-8_DataSheet_2005.pdf]], [[media:SU-8_DataSheet_2075.pdf|SU-8_DataSheet_2075.pdf]] | |[[media:SU-8_DataSheet_2005.pdf|SU-8_DataSheet_2005.pdf]], [[media:SU-8_DataSheet_2075.pdf|SU-8_DataSheet_2075.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]] | |[[Specific_Process_Knowledge/Lithography/Coaters#KS Spinner|KS Spinner]] | ||
|PGMEA, | |PGMEA, mr-Dev 600 developer | ||
|IPA | |IPA | ||
|Plasma ashing can remove crosslinked SU8. | |Plasma ashing can remove crosslinked SU8. | ||
Revision as of 11:31, 22 February 2014
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UV Lithography uses ultraviolet light to transfer a pattern from a mask to a wafer coated with photoresist. The photoresist film is spin coated on the wafers and the pattern is transferred to the wafer by using a mask aligner. DTU Danchip houses a number of automatic or semi-automatic coaters and mask aligners.
Resist Overview
| Resist | Polarity | Manufacturer | Comments | Technical reports | Spin Coating | Developer | Rinse | Remover | Process flows (in docx-format) |
| AZ 5214E | Positive but can be reversed | AZ Electronic Materials | Can be used for both positive and reverse processes with resist thickness between 1 to 4um. | AZ5214E.pdf | SSE, KS Spinner, III-V Spinner | 351B developer | DI water | Acetone | |
| A 4562 | Positive | AZ Electronic Materials | For process with resist thickness between 6 and 25um. | AZ4500.pdf | SSE, KS Spinner | 351B developer | DI water | Acetone | Process_Flow_thick_AZ4562_vers2.docx |
| AZ MiR 701 | Positive | AZ Electronic Materials | High selectivity for dry etch. | AZ_MiR_701.pdf | Spin Track 1 + 2 | AZ 726 MIF developer | DI water | Remover 1165 | Process_Flow_AZ_MiR701.docx |
| AZ nLOF 2020 | Negative | AZ Electronic Materials | AZ_nLOF_2020.pdf | Spin Track 1 + 2 | AZ 726 MIF developer | DI water | Remover 1165 | Process_Flow_AZ_nLOF_2020.docx
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| SU-8 | Negative | Microchem | SU-8_DataSheet_2005.pdf, SU-8_DataSheet_2075.pdf | KS Spinner | PGMEA, mr-Dev 600 developer | IPA | Plasma ashing can remove crosslinked SU8. | Process_Flow_SU8_70um.docx
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