Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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===Slow etch of SiO2 with resist as masking material - using a 6" carrier wafer with recess === | ===Slow etch of SiO2 with resist as masking material - using a 6" carrier wafer with recess === | ||
This recipe can be used for slow etching of SiO2 with resist as masking material. Here are some test results presented. | This recipe can be used for slow etching of SiO2 with resist as masking material. Here are some test results presented. | ||