Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

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-===Slow etch of SiO2 with resist as masking material - with direct clamping ===
+===Slow etch of SiO2 with resist as masking material - using a 6" carrier wafer with recess ===
-This recipe can be used for slow etching of SiO2 with resist as masking material when normal clamping is possible. Normal clamping is prefered because it give the best and most repeatable cooling of the wafer.
+This recipe can be used for slow etching of SiO2 with resist as masking material. Here are some test results presented.
-Here are some test results presented.
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