Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions

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-===Slow etch of silicon nitride with resist as masking material - with direct clamping ===
+===Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ===
-This recipe can be used for slow etching of silicon nitride with resist as masking material when normal clamping is possible. Normal clamping is prefered because it give the best and most repeatable cooling of the wafer.
+This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented.
-Here are some test results presented.
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