Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions

Revision as of 13:26, 20 February 2014

This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented.

Results	Test on wafer with 20% load, by Izzet Yildiz @Nanotech
Etch rate of LPCVD nitride	60-65 nm/min (20% etch load) (Feb. 2014)
Selectivity to resist [SiN : AZ resist]	1:0.75
Wafer uniformity (100mm)	?
Profile [^o]	?
Wafer uniformity map (click on the image to view a larger image)	not measured
SEM profile images	Not measured

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-===Slow etch of silicon nitride with resist as masking material - with direct clamping ===
+===Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess ===
-This recipe can be used for slow etching of silicon nitride with resist as masking material when normal clamping is possible. Normal clamping is prefered because it give the best and most repeatable cooling of the wafer.
+This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented.
-Here are some test results presented.
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