Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions
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{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
!Results | !Results | ||
!Test on wafer with 20% load, by Izzet Yildiz @Nanotech | !Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech'' | ||
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|Etch rate of LPCVD nitride | |Etch rate of LPCVD nitride | ||
|'''60-65 nm/min (20% etch load) (Feb. | |'''60-65 nm/min (20% etch load) (Feb. 2014)''' | ||
|- | |- | ||
|Selectivity to resist [SiN : AZ resist] | |Selectivity to resist [SiN : AZ resist] | ||