Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions
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{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
!Results | !Results | ||
!Test on wafer with 20% load, by Izzet Yildiz @Nanotech | !Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech'' | ||
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|Etch rate of LPCVD nitride | |Etch rate of LPCVD nitride | ||
|'''60-65 nm/min (20% etch load) (Feb. | |'''60-65 nm/min (20% etch load) (Feb. 2014)''' | ||
|- | |- | ||
|Selectivity to resist [SiN : AZ resist] | |Selectivity to resist [SiN : AZ resist] | ||
Revision as of 13:23, 20 February 2014
Slow etch of silicon nitride with resist as masking material - with direct clamping
This recipe can be used for slow etching of silicon nitride with resist as masking material when normal clamping is possible. Normal clamping is prefered because it give the best and most repeatable cooling of the wafer. Here are some test results presented.
| Parameter | Resist mask |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 0 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | Test on wafer with 20% load, by Izzet Yildiz @Nanotech |
|---|---|
| Etch rate of LPCVD nitride | 60-65 nm/min (20% etch load) (Feb. 2014) |
| Selectivity to resist [SiN : AZ resist] | 1:0.75 |
| Wafer uniformity (100mm) | ? |
| Profile [o] | ? |
| Wafer uniformity map (click on the image to view a larger image) | not measured |
| SEM profile images | Not measured |