Specific Process Knowledge/Lithography/DUVStepperLithography: Difference between revisions
| Line 21: | Line 21: | ||
*Negative DUV resist for spinning in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range [[Media:UVN2300.pdf|UVN2300-0.8]]. | *Negative DUV resist for spinning in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range [[Media:UVN2300.pdf|UVN2300-0.8]]. | ||
== Equipment performance and process related parameters == | |||
{| border="2" cellspacing="0" cellpadding="2" | {| border="2" cellspacing="0" cellpadding="2" | ||