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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
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|-
|Etch rate of thermal oxide
|Etch rate of thermal oxide
|'''64.9 nm/min (100% etch load) (22-01-2014)'''  
|'''44.1 nm/min (50% etch load) (01-02-2014)'''  
|-
|-
|Selectivity to  resist [:1]
|Selectivity to  resist [:1]
|No result
|~0.9
|-
|-
|Wafer uniformity (100mm)
|Wafer uniformity (100mm)
|'''±0.8% (22-01-2014)'''
|'''±1.6% (01-02-2014)'''
|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
|Not tested
|Take a look at the iamges but be aware the the resist profile was not good to begin with.
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|-
|Images (click on the image to view a larger image)
|Images (click on the image to view a larger image)
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