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| |Size of substrate | | |Size of substrate |
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| *4" and 6" in our standard bath | | *4" in our standard bath |
| *4", 2" in "Fumehood KOH" | | *4", 2" in "Fumehood KOH" |
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Revision as of 11:14, 15 January 2008
Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
Dry etches:
Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon
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KOH
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PolySilicon etch
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RIE
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ASE
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General description
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- Anisotropic etch in the (100)-plan
- High selectivity to the other plans
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- Isotropic etch in Silicon and Polysilicon
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- Can etch isotropic and anisotropic depending on the process parameters
- Anisotropic etch: vertical sidewalls independent on the crystal plans
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- As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
- Good selectivity to photoresist
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Possible masking materials:
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- Silicon Nitride
- Silicon Oxide
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- Photoresist
- E-beam resist
- Silicon Oxide
- Silicon Nitride
- Aluminium
- Chromium (ONLY RIE2!)
- Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
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- Photoresist
- Silicon Oxide
- Silicon Nitride
- Aluminium
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Etch rate
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- Si(100) @80oC: 1.29+0.05 µm/min
- Si(100) @70oC: ~0.7 µm/min
- Si(100) @60oC: ~0.4 µm/min
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- ~100-200 nm/min, highly dependent on doping level
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<40nm/min to >600nm/min depending on recipe parameters and mask design
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<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
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Size of substrate
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- 4" in our standard bath
- 4", 2" in "Fumehood KOH"
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4" in our standard bath
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4" (or smaller with carrier)
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6" (when it is set up for 6") and 4" (or smaller if you have a carrier)
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Batch size
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- 25 wafers at a time
- 1-5 wafers in "Fumehood KOH"
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25 wafers at a time
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One wafer at a time
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One wafer at a time
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Allowed materials
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- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Other materials (only in "Fumehood KOH")
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- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Photoresist
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- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Photoresist
- E-beam resist
- Aluminium
- Chromium (ONLY RIE2!)
- Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
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- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Photoresist
- E-beam resist
- Aluminium
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