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| Line 32: |
Line 32: |
| |- | | |- |
| |-style="background:LightGrey; color:black" | | |-style="background:LightGrey; color:black" |
| !Possible masking materials | | !Chemical |
| | | | | |
| *Photoresist
| | HMDS |
| *PolySilicon
| |
| *Silicon nitride (LPCVD)
| |
| *Blue film
| |
| *Cr/Au for deeper etches (plastic beaker)
| |
| | | | | |
| *Photoresist
| | HF |
| *DUV resist
| |
| *E-beam resist
| |
| *Silicon Oxide
| |
| *Silicon Nitride
| |
| *Metals if they cover less than 5% of the wafer area (ONLY RIE2!)
| |
| | | | | |
| *Photoresist
| | none |
| *DUV resist
| |
| *E-beam resist
| |
| *Silicon Oxide
| |
| *Silicon Nitride
| |
| *Aluminium
| |
| *Chromium (Please try to avoid this)
| |
| |- | | |- |
|
| |
|