Specific Process Knowledge/Lithography/Pretreatment

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Pretreatment

All surfaces can be divided to hydrophilic or hydrophobic surfaces, where the oxidized surfaces such SiO2 or surface with native oxide formation on Si or Al substrates consider to be hydrophilic and have very bad wetting with hydrophobic resist.

Therefore it is very important to do the pretreatment step before the spinning. Here we will give an overview of treatments available at Danchip to promote photoresist adhesion.

Comparing pretreatment methods

	Wet Silicon Oxide etch (BHF/HF)	RIE (Reactive Ion Etch)	AOE (Advanced Oxide Etch)	IBE/IBSD Ionfab 300
Generel description	Isotropic etch	Anisotropic etch: vertical sidewalls	Anisotropic etch: vertical sidewalls	Primarily for pure physical etch by sputtering with Ar-ions
Possible masking materials	Photoresist PolySilicon Silicon nitride (LPCVD) Blue film Cr/Au for deeper etches (plastic beaker)	Photoresist DUV resist E-beam resist Silicon Oxide Silicon Nitride Metals if they cover less than 5% of the wafer area (ONLY RIE2!)	Photoresist DUV resist E-beam resist Silicon Oxide Silicon Nitride Aluminium Chromium (Please try to avoid this)	Any material that is accepted in the machine
Etch rate range	~75 nm/min (Thermal oxide) in BHF ~90 nm/min (Thermal oxide) in SIO Etch ~25 nm/min (Thermal oxide) in 5%HF ~3-4µm/min in 40%HF	Process dependent Tested range: ~20nm/min - ~120nm/min	Process dependent Tested range: ~230nm/min - ~550nm/min	Process dependent Tested once ~22nm/min
Substrate size	#1-25 100mm wafers in our 100mm bath What can be fitted in a plastic beaker	As many small samples as can be fitted on the 100mm carrier. #1 100mm wafer (or smaller with carrier) #1 150mm wafer (only RIE2 when set up for 150mm)	As many small samples as can be fitted on a 100mm wafer #1 50 mm wafer fitted on a 100mm wafer #1 100 mm wafer #1 150 mm wafers (only when the system is set up to 150mm)	As many samples as can be securely fitted on a up to 200mm wafer #1 50 mm wafer with special carrier #1 100 mm wafer with special carrier #1 150 mm wafers with special carrier #1 200 mm wafer
Allowed materials	In the dedicated bath: Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist Blue film In a plastic beaker: No limits cross contamination wise	Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist DUV resist E-beam resist Other metals if they cover less than 5% of the wafer area (ONLY RIE2!) Quartz/fused silica	Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist DUV resist E-beam resist Aluminium Chromium (try to avoid it) Quartz/fused silica	Silicon Silicon oxides Silicon (oxy)nitrides Metals from the +list Metals from the -list Alloys from the above list Stainless steel Glass III-V materials Resists Polymers Capton tape

HMDS

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The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. HMDS treatment leaves a mono-layer of TMS (trimethylsilyl) on the Si or SiO₂ surface.

The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C₆H₁₉NSi₂. Here is a schematic overview of HMDS treatment of silicon-oxide surface.

Priming of oxide-forming substrates by HMDS treatment.

Comparing HMDS priming

Equipment		HMDS oven	Spin Track 1 + 2
Purpose		HMDS priming	HMDS priming only HMDS priming and spin coating
Priming chemical		hexamethyldisilizane (HMDS)
Performance	Contact angle	standard recipe 82° (on SiO2)	60° - 90°; standard recipe 82° (on SiO2)
Process parameters	Process temperature	150°C	50°C
	Process time	32.5 minutes	3 min / wafer
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafers
	Allowed materials	All cleanroom materials	Silicon (with oxide, nitride, or metal films or patterning) Glass (borosilicate and quartz)
	Batch	1 - 25, multiple batches possible	1 - 25

HMDS oven

The HMDS oven is placed in Cleanroom 3.

At Danchip we use Star2000 model from IMTEC to do vapor deposition of hexamethyldisilizane (HMDS) under the special conditions: low pressure and high chamber temperature. The result of the dehydration bake and HMDS prime is that the wafers become hydrophobic after the treatment.

The user manual, user APV, and contact information can be found in LabManager:

HMDS oven in LabManager

Process information

• Recipe 4: baseline prime process with 5 min priming time

Baseline prime process description:

1. Vacuum, 2 min

2. Nitrogen pump, 3.5 min

3. Heat- up, 10 min

4. Vacuum, 4.5 min

5. HMDS prime, 5 min

6. Vacuum chamber exhaust, 3 min

7. Nitrogen back-fill, 3.5 min

Equipment performance and process related parameters

Purpose		Promotion of photoresist adhesion by hydrophobization
Chemical		hexamethyldisilizane
Performance	Contact angle	82° (on SiO2)
Process parameters	Process temperature	150 °C
	Process time	32.5 minutes
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials
	Batch	1 - 25, multiple batches possible

Buffered HF-Clean

BHF: positioned in cleanroom 3

Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip.

BHF is mostly used to do pretreatment step for new Si wafers. The native dioxide layer will be removed during 30 sec etching and in this way we will promote the resist adhesion on the Si substrates. We recommend to spin resist asap after the procedure.

Oven 250C

250 degrees oven for pretreatment: positioned in cleanroom 3

The oven is typically used for pretreatment (dehydration) of Si and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, better during the night, and spin the resist on them asap.