Specific Process Knowledge/Etch/Wet Aluminium Etch: Difference between revisions

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==Wet Aluminium Etch==
==Wet Aluminium Etch==
[[Image:Wet_Al_etch.jpg|300x300px|thumb|Wet Aluminium Etch: Positioned in cleanroom 4]]
[[Image:Wet_Al_etch.jpg|300x300px|thumb|Wet Aluminium Etch: Positioned in cleanroom 4]]
Wet etching of aluminium is done with two different solutions:
# H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C
# Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
===Comparing the two solutions===
{| border="1" cellspacing="0" cellpadding="4" align="left"
!
! Aluminium Etch 1
! Aluminium Etch 2
|-
|General description
|
Etch of pure aluminium
|
Etch of aluminium + 1.5% Si
|-
|Chemical solution
|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2
|PES 77-19-04
|-
|Process temperature
|50 <sup>o</sup>C
|20 <sup>o</sup>C
|-
|Possible masking materials:
|
Photoresist (1.5 µm AZ5214E)
|
Photoresist (1.5 µm AZ5214E)
|-
|Etch rate
|
~100 nm/min (Pure Al)
|
~60(??) nm/min
|-
|Batch size
|
1-25 wafers at a time
|
1-25 wafer at a time
|-
|Size of substrate
|
4" wafers
|
4" wafers
|-
|Allowed materials
|
*Aluminium
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
|
*Aluminium
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
*Photoresist
*E-beam resist
|-
|}

Revision as of 10:53, 15 January 2008

Wet Aluminium Etch

Wet Aluminium Etch: Positioned in cleanroom 4

Wet etching of aluminium is done with two different solutions:

  1. HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} O:HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} POFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} 1:2 at 50 oC
  2. Pre-mixed etch solution: PES 77-19-04 at 20 oC


Comparing the two solutions

Aluminium Etch 1 Aluminium Etch 2
General description

Etch of pure aluminium

Etch of aluminium + 1.5% Si

Chemical solution HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} O:HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} POFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} 1:2 PES 77-19-04
Process temperature 50 oC 20 oC
Possible masking materials:

Photoresist (1.5 µm AZ5214E)

Photoresist (1.5 µm AZ5214E)

Etch rate

~100 nm/min (Pure Al)

~60(??) nm/min

Batch size

1-25 wafers at a time

1-25 wafer at a time

Size of substrate

4" wafers

4" wafers

Allowed materials
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
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