Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions
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{| border="1" cellspacing="0" cellpadding="4" align="center" | {| border="1" cellspacing="0" cellpadding="4" align="center" | ||
! | ! | ||
! Wet Silicon Oxide etch (BHF and SIO Etch) | ! Wet Silicon Oxide etch (BHF and SIO Etch (wetting agent)) | ||
! RIE | ! RIE | ||
! AOE | ! AOE | ||
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|Etch rate | |Etch rate | ||
| | | | ||
~ | ~75 nm/min (Thermal oxide) in BHF | ||
~90 nm/min (Thermal oxide) in SIO Etch | |||
| | | | ||
*Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | *Typically 40-120 nm/min can be increased or decreased by using other recipe parameters. | ||