Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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[[Image:HMDS.jpg|500x500px|thumb|left|Priming of oxide-forming substrates by HMDS treatment.]] | [[Image:HMDS.jpg|500x500px|thumb|left|Priming of oxide-forming substrates by HMDS treatment.]] | ||
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{| border="2" cellspacing="0" cellpadding="2" | |||
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Spin Track | |||
|style="background:WhiteSmoke; color:black" align="center"|<b>1</b> | |||
|style="background:WhiteSmoke; color:black" align="center"|<b>2</b> | |||
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!style="background:silver; color:black;" align="center" width="60"|Purpose | |||
|style="background:LightGrey; color:black"| | |||
|style="background:WhiteSmoke; color:black"| | |||
*HMDS priming | |||
|style="background:WhiteSmoke; color:black"| | |||
*HMDS priming | |||
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!style="background:silver; color:black;" align="center" width="60"|Priming chemical | |||
|style="background:LightGrey; color:black"| | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
hexamethyldisilizane | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance | |||
|style="background:LightGrey; color:black"|HMDS contact angle | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
60° - 90°; standard recipe 82° (on SiO<sub>2</sub>) | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameters | |||
|style="background:LightGrey; color:black"|HMDS priming temperature | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
50°C | |||
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|style="background:LightGrey; color:black"|HMDS priming time | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
3 min / wafer | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | |||
|style="background:LightGrey; color:black"|Substrate size | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
100 mm wafers | |||
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| style="background:LightGrey; color:black"|Allowed materials | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
Silicon (with oxide, nitride, or metal films or patterning) | |||
Glass (borosilicate and quartz) | |||
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|style="background:LightGrey; color:black"|Batch | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
1 - 25 | |||
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