Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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===Equipment performance and process related parameters=== | ===Equipment performance and process related parameters=== | ||
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Spin Track | |||
|style="background:WhiteSmoke; color:black" align="center"|<b>1</b> | |||
|style="background:WhiteSmoke; color:black" align="center"|<b>2</b> | |||
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!style="background:silver; color:black;" align="center" width="60"|Purpose | |||
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*HMDS priming | |||
*Spin coating and soft baking | |||
*Priming, coating, and baking | |||
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*HMDS priming | |||
*Spin coating and soft baking | |||
*Priming, coating, and baking | |||
*Post-exposure baking | |||
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!style="background:silver; color:black;" align="center" width="60"|Resist | |||
|style="background:LightGrey; color:black"| | |||
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AZ MiR 701 (29cps) | |||
positive tone | |||
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AZ nLOF 2020 | |||
negative tone | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | |||
|style="background:LightGrey; color:black"|Coating thickness | |||
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1 - 3 µm | |||
|style="background:WhiteSmoke; color:black" align="center"| | |||
1 - 4 µm | |||
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|style="background:LightGrey; color:black"|HMDS contact angle | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
60° - 90°; standard recipe 82° (on SiO2) | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameters | |||
|style="background:LightGrey; color:black"|Spin speed | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
10 - 9990 rpm | |||
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|style="background:LightGrey; color:black"|Spin acceleration | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
1000 - 50000 rpm/s | |||
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|style="background:LightGrey; color:black"|Hotplate temperature | |||
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90°C | |||
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110°C | |||
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|style="background:LightGrey; color:black"|HMDS priming temperature | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
50°C | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | |||
|style="background:LightGrey; color:black"|Substrate size | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
100 mm wafers | |||
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| style="background:LightGrey; color:black"|Allowed materials | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
Silicon (with oxide, nitride, or metal films or patterning) | |||
Glass (borosilicate and quartz) | |||
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|style="background:LightGrey; color:black"|Batch | |||
|style="background:WhiteSmoke; color:black" align="center" colspan="2"| | |||
1 - 25 | |||
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