Specific Process Knowledge/Characterization: Difference between revisions
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*[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]] | *[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Contact angle measurement]] | ||
*[[/Four-Point_Probe|Four-Point_Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] --> | *[[/Four-Point_Probe|Four-Point_Probe (Resistivity measurement)]] <!-- [[/Resistivity measurement|Resistivity measurement]] --> | ||
*[[Specific Process Knowledge/III-V Process/characterisation/III-V ECV-profiler|Carrier density (doping) profiler]] | |||
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]] | *[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]] | ||
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Revision as of 14:32, 3 February 2014
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Choose characterization topic
- Sample imaging
- Topographic measurement
- Stress measurement
- Measurement of film thickness and optical constants
- Wafer thickness measurement
- Element analysis
- Contact angle measurement
- Four-Point_Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy