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Specific Process Knowledge/Back-end processing/Polishing machine: Difference between revisions

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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b>
|style="background:WhiteSmoke; color:black"|<b>Polisher/Lapper</b>
|style="background:WhiteSmoke; color:black"|<b>Equipment 2</b>
|style="background:WhiteSmoke; color:black"|<b>Equipment 2</b>
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!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"|  
Thinning of substrates of
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|style="background:WhiteSmoke; color:black"|
*Purpose 1
*InP
*Purpose 2
*GaAs
*Silicon
*Metals
*Glass/Quartz
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Purpose 1
*Purpose 1
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|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Response 1
|style="background:LightGrey; color:black"| Thinning
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Removal rate: 1-10µm/min
*Performance range 2
*Thickness accuracy: +/- 10 µm
*Thickness homogeneity: +/- 10 µm
*Roughness: +/- ? µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 1
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*Performance range 3
*Performance range 3
|-
|-
|style="background:LightGrey; color:black"|Response 2
|style="background:LightGrey; color:black"|Polishing
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range
*Removal rate: ~1 µm/min
*Thickness accuracy: ? µm
*Thickness homogeneity: ? µm
*Roughness: +/- ? µm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range  
*Performance range  
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|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Parameter 1
|style="background:LightGrey; color:black"|Polishing liquid
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*Range
*Al2O3 (alumina) powder: 3, 9 or 20 µm
*Chemlox (for polishing)
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|style="background:WhiteSmoke; color:black"|
*Range
*Range
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|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:LightGrey; color:black"|Rotation speed
|style="background:WhiteSmoke; color:black"|
*Thinning: 5-20 rpm
*Polishing: 5-80 rpm
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|style="background:WhiteSmoke; color:black"|
*Range  
*Range  
|-
|style="background:LightGrey; color:black"|Arm sweep
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*Thinning: stationary
*Polishing: 12% (inner) - 80% (outer)
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|style="background:WhiteSmoke; color:black"|
*Range  
*Range  
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*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
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|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> small samples
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| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*InP
*Allowed material 2
*GaAs
*Silicon
*Metals
*Glass/Quartz
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1  
*Allowed material 1