Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions
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==Deposition of polysilicon using LPCVD== | ==Deposition of polysilicon using LPCVD== | ||
[[Image:A4_Furnace_PolySi.jpg|300x300px|thumb|4" polysilicon furnace (B4) located in cleanroom | [[Image:A4_Furnace_PolySi.jpg|300x300px|thumb|4" polysilicon furnace (B4) located in cleanroom B-1]] | ||
[[Image:E2.JPG|300x300px|thumb|6" polysilicon furnace located (E2) in cleanroom | [[Image:E2.JPG|300x300px|thumb|6" polysilicon furnace located (E2) in cleanroom E-6]] | ||
Danchip has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) polysilicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous polySi and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively. Both furnaces are Tempress horizontal furnaces. | Danchip has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) polysilicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous polySi and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively. Both furnaces are Tempress horizontal furnaces. | ||