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Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions

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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>4" LPCVD polysilicon furnace (B3)</b>
|style="background:WhiteSmoke; color:black"|<b>4" LPCVD polysilicon furnace (B4)</b>
|style="background:WhiteSmoke; color:black"|<b>6" LPCVD polysilicon furnace (E2)</b>
|style="background:WhiteSmoke; color:black"|<b>6" LPCVD polysilicon furnace (E2)</b>
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|-
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*Amorphous polySi
*Amorphous polySi
*Boron doped polySi (B<sub>2</sub>H<sub>6</sub> dopant)
*Boron doped polySi (B<sub>2</sub>H<sub>6</sub> dopant)
*Phosphorus doped polySi
*Phosphorus doped polySi (PH<sub>3</sub> dopant)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
4" furnace:
*Standard polySi
*Standard polySi
*Amorphous polySi
*Amorphous polySi
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*150-220 mTorr
*150-220 mTorr
The process pressure depends on the actual process
The process pressure depends on the process
|-
|-
|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
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*B<sub>2</sub>H<sub>6</sub>: 7 sccm
*B<sub>2</sub>H<sub>6</sub>: 7 sccm
*PH<sub>3</sub>: 7 sccm
*PH<sub>3</sub>: 7 sccm
The silane (SiH<sub>4</sub>) flow depends on the actual process
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*SiH<sub>4</sub>: 50-70 sccm
*SiH<sub>4</sub>: 50-70 sccm
*BCl<sub>1</sub>: 1 sccm
*BCl<sub>3</sub>: 1 sccm
The silane (SiH<sub>4</sub>) flow depends on the process
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|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-20 100 wafers  
*1-30 100 mm wafers  
Including a testwafer with ~110 nm oxide
Including a testwafer with ~110 nm oxide
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-25 (or 50) 100 mm wafers
*1-25 or 1-50 100 mm wafers
*1-25 (or 50) 150 mm wafers
*1-25 or 1-50 150 mm wafers
Including a testwafer with ~110 nm oxide
Including a testwafer with ~110 nm oxide
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
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