Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions
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==LPCVD (Low Pressure Chemical Vapor Deposition) PolySilicon== | ==LPCVD (Low Pressure Chemical Vapor Deposition) PolySilicon== | ||
[[Image:A4_Furnace_PolySi.jpg|300x300px|thumb|4" polysilicon furnace (B3) located in cleanroom 2]] | [[Image:A4_Furnace_PolySi.jpg|300x300px|thumb|4" polysilicon furnace (B3) located in cleanroom 2]] | ||
[[Image:E2.JPG|300x300px|thumb|6" polysilicon furnace located in cleanroom 14]] | [[Image:E2.JPG|300x300px|thumb|6" polysilicon furnace located (E2) in cleanroom 14]] | ||
Danchip has two furnaces for deposition of LPCVD polysilicon: A new 6" furnace (installed in 2011) for deposition of standard polySi, amorphous polySi and boron doped polySi on 4" or 6" wafers and an older 4" furnace (installed in 1995) for deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 4" wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si" and "Furnace: LPCVD Poly-Silicon 6inch", respectively. Both furnaces are Tempress horizontal furnaces. | Danchip has two furnaces for deposition of LPCVD polysilicon: A new 6" furnace (installed in 2011) for deposition of standard polySi, amorphous polySi and boron doped polySi on 4" or 6" wafers and an older 4" furnace (installed in 1995) for deposition of standard polySi, amorphous polySi, boron- and phosphorous doped polySi on 4" wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si" and "Furnace: LPCVD Poly-Silicon 6inch", respectively. Both furnaces are Tempress horizontal furnaces. | ||