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Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions

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{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>4" LPCVD polysilicon furnace (B3)</b>
|style="background:WhiteSmoke; color:black"|<b>6" LPCVD polysilicon furnace (E2)</b>
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|Deposition of LPCVD polysilicon
|style="background:LightGrey; color:black"|Deposition of  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
6" furnace:
*Standard polySi
*Amorphous polySi
*Boron doped polySi (BCl<sub>3</sub> dopant)
4" furnace:
*Standard polySi
*Standard polySi
*Amorphous polySi
*Amorphous polySi
*Boron doped polySi (B<sub>2</sub>H<sub>6</sub> dopant)
*Boron doped polySi (B<sub>2</sub>H<sub>6</sub> dopant)
*Phosphorus doped polySi
*Phosphorus doped polySi
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
6" furnace:
*Standard polySi: 0-2000 nm
*Amorphous polySi: 0-1000 nm
*Boron doped polySi: 0-1000 nm
4" furnace:
4" furnace:
*Standard polySi: 0-2000 nm
*Standard polySi
*Amorphous polySi: 0-2000 nm
*Amorphous polySi
*Boron doped polySi: 0-2000 nm
*Boron doped polySi (BCl<sub>3</sub> dopant)
*Phosphorus doped polySi: 0-1000 nm
Thicker layers have to be deposited over more runs
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|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Step coverage
|style="background:LightGrey; color:black"|Step coverage
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Good
*Very Good
|style="background:WhiteSmoke; color:black"|
*Very good
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|style="background:LightGrey; color:black"|Film quality
|style="background:LightGrey; color:black"|Film quality
|style="background:WhiteSmoke; color:black"|
*Deposition on both sides of the substrate
*Good uniformity over the wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Deposition on both sides of the substrate
*Deposition on both sides of the substrate
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|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
6" furnace:
*Standard polySi: 620 <sup>o</sup>C
*Standard polySi: 620 <sup>o</sup>C
*Amorphous polySi: 560-580 <sup>o</sup>C
*Amorphous polySi: 560-580 <sup>o</sup>C
*Boron doped polySi: 600-620 <sup>o</sup>C
*Boron doped polySi: 620 <sup>o</sup>C
4" furnace:
*Phosphorus doped polySi: 620 <sup>o</sup>C
|style="background:WhiteSmoke; color:black"|
*Standard polySi: 620 <sup>o</sup>C
*Standard polySi: 620 <sup>o</sup>C
*Amorphous polySi: 560-580 <sup>o</sup>C
*Amorphous polySi: 560-580 <sup>o</sup>C
*Boron doped polySi: 620 <sup>o</sup>C
*Boron doped polySi: 600-620 <sup>o</sup>C
*Phosphorus doped polySi: 620 <sup>o</sup>C
 
The process temperature vary over the furnace tube
The process temperature vary over the furnace tube
|-
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
6" furnace:
*250 mTorr
|style="background:WhiteSmoke; color:black"|
*150-220 mTorr
*150-220 mTorr
4" furnace:
*250 mTorr
The process pressure depends on the actual process
The process pressure depends on the actual process
|-
|-
|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
6" furnace:
*SiH<sub>4</sub>: 50-70 sccm
*BCl<sub>1</sub>: 1 sccm
4" furnace:
*SiH<sub>4</sub>: 80 sccm
*SiH<sub>4</sub>: 80 sccm
*B<sub>2</sub>H<sub>6</sub>: 7 sccm
*B<sub>2</sub>H<sub>6</sub>: 7 sccm
*PH<sub>3</sub>: 7 sccm
*PH<sub>3</sub>: 7 sccm
The silane (SiH<sub>4</sub>) flow depends on the actual process
The silane (SiH<sub>4</sub>) flow depends on the actual process
|style="background:WhiteSmoke; color:black"|
*SiH<sub>4</sub>: 50-70 sccm
*BCl<sub>1</sub>: 1 sccm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
6" furnace:
*1-20 100 wafers
*1-25 4" wafers or 6" wafers per run
Including a testwafer with ~110 nm oxide
4" furnace:
|style="background:WhiteSmoke; color:black"|
*1-30 4" wafers per run
*1-25 (or 50) 100 mm wafers
Deposition on both sides of the substrate
*1-25 (or 50) 150 mm wafers
Including a testwafer with ~110 nm oxide
|style="background:WhiteSmoke; color:black"|
|-
|-
| style="background:LightGrey; color:black"|Substrate materials allowed
| style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (only clean wafers):
*Silicon wafers (new or RCA cleaned)
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
**with layers of silicon oxide or silicon (oxy)nitride  
**from furnaces in stack A or B in cleanroom 2
**from the A, B and E stack furnaces
*Quartz wafers (RCA cleaned)
*Quartz/fused silica wafers (RCA cleaned)
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new or RCA cleaned)
**with layers of silicon oxide or silicon (oxy)nitride
**from the A, B and E stack furnaces
*Quartz/fused silica wafers (RCA cleaned)
|-  
|-  
|}
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