Specific Process Knowledge/Characterization/XPS: Difference between revisions
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|style="background:LightGrey; color:black"|Chemical analysis | |style="background:LightGrey; color:black"|Chemical analysis | ||
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* Probing elemental composition | * [[Specific Process Knowledge/Characterization/XPS/XPS elemental composition|Probing elemental composition]] | ||
* Chemical state identification | * [[Specific Process Knowledge/Characterization/XPS/XPS Chemical states |Chemical state identification]] | ||
* Non destructive technique | * Non destructive technique | ||
* Surface sensitive | * Surface sensitive | ||
* Depth profiling possible by ion beam etch of sample | * [[Specific Process Knowledge/Characterization/XPS/XPS Depth profiling|Depth profiling]] possible by ion beam etch of sample | ||
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!rowspan="5" style="background:silver; color:black" align="left"| Performance | !rowspan="5" style="background:silver; color:black" align="left"| Performance | ||
Revision as of 09:02, 28 January 2014
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XPS-ThermoScientific
A X-ray Photoelectron Spectroscopy (XPS) system can be used at Danchip. The system is a Thermo K-Alpha system, placed in the basement of building 346.
The user manual(s), user APV(s), technical information and contact information can be found in LabManager:
XPS-ThermoScientific in LabManager
Elemental analysis
The XPS instrument can be used to do elemental analysis, chemical state analysis on the sample surface or deeper down by a depth profiling. A comparison about techniques and instruments used for elemental analysis at Danchip can be found on the page Element analysis.
More about the different possibilities of the XPS instrument is found here:
Equipment performance of XPS-ThermoScientific
| Purpose | Chemical analysis |
|
|---|---|---|
| Performance | Spot size | Can be set between 30µm - 400µm |
| Probing depth | Depending on probed element. Max probe depth lies within 10-200 Å. | |
| Resolution | Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected. | |
| Charge compensation |
Flood gun can be used for charge compensation of non conductive samples | |
| Finding structures | Choose measuring spot from camera image (magnified) | |
| Depth profiling | Purpose | With ion beam etch the top layer of the material can be removed, to do a depth profiling |
| Ion beam size | About 3x1 mm | |
| Substrates | Substrate size |
Maximum 60x60 mm |
| Substrate thickness |
Maximum height about 20 mm |