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Specific Process Knowledge/Characterization/XPS: Difference between revisions

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Knil (talk | contribs)
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!style="background:silver; color:black" align="left"|Depth profiling
!rowspan="2" style="background:silver; color:black" align="left"|Depth profiling
|style="background:LightGrey; color:black"|Purpose
|style="background:LightGrey; color:black"|Purpose
|style="background:WhiteSmoke; color:black"|With ion beam etch the top layer of the material can be removed, to do a depth profiling
|style="background:WhiteSmoke; color:black"|With ion beam etch the top layer of the material can be removed, to do a depth profiling
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|style="background:LightGrey; color:black"|Ion beam size
|style="background:LightGrey; color:black"|Ion beam size
|style="background:WhiteSmoke; color:black"| About 0,3x1 mm
|style="background:WhiteSmoke; color:black"| About 0,3x1 mm


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!style="background:silver; color:black" align="left"|Substrates
!rowspan="2" style="background:silver; color:black" align="left"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Max 60x60 mm
Max 60x60 mm
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|style="background:silver; color:black"|
| style="background:LightGrey; color:black"|Substrate thickness
| style="background:LightGrey; color:black"|Substrate thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|