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The Molecular Vapor Deposition tool

The Applied Microstructures MVD 100 system deposits molecular films on surfaces. These films serve a wide range of purposes ranging from antistiction coatings of nanoimprint lithography stamps to protecting MEMS structures. At Danchip the MVD is essential for nanoimprint lithography.

The user manual, user APV, and contact information can be found in LabManager

Process information

Equipment performance and process related parameters

Purpose		Spin coating and soft baking UV sensative resists Spin coating SU8 resists
Resist		AZ5214E permanent line AZ4562 manual dispense SU8 resists manual dispense
Performance	Coating thickness	AZ5214E 1-4,2 µm AZ4526 6,2-10 µm SU8 resits 0,1-100 µm
Process parameters	Spin speed	100 - 5000 rpm
	Spin acceleration	100 - 5000 rpm/s
	Hotplate temperature	changeable temperature from 20° to 200° SU8 must be bake out on SU8 dedicated hotplates
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials except III-V materials
	Batch	1

@@ Line 16: / Line 16: @@
 === Equipment performance and process related parameters ===
+{| border="2" cellspacing="0" cellpadding="2"
+!style="background:silver; color:black;" align="center" width="60"|Purpose
+|style="background:LightGrey; color:black"|
+|style="background:WhiteSmoke; color:black"|
+*Spin coating and soft baking UV sensative resists
+*Spin coating SU8 resists
+|-
+!style="background:silver; color:black;" align="center" width="60"|Resist
+|style="background:LightGrey; color:black"|
+|style="background:WhiteSmoke; color:black" align="center"|
+* AZ5214E permanent line
+* AZ4562 manual dispense
+* SU8 resists manual dispense
+|-
+!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
+|style="background:LightGrey; color:black"|Coating thickness
+|style="background:WhiteSmoke; color:black" align="center"|
+* AZ5214E 1-4,2 µm
+* AZ4526 6,2-10 µm
+* SU8 resits 0,1-100 µm
+|-
+!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
+|style="background:LightGrey; color:black"|Spin speed
+|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
+- 5000 rpm
+|-
+|style="background:LightGrey; color:black"|Spin acceleration
+|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
+- 5000 rpm/s
+|-
+|style="background:LightGrey; color:black"|Hotplate temperature
+|style="background:WhiteSmoke; color:black" align="center"|
+* changeable temperature from 20° to 200°
+* SU8 must be bake out on SU8 dedicated hotplates
+|-
+!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
+|style="background:LightGrey; color:black"|Substrate size
+|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
+* 50 mm wafers
+* 100 mm wafers
+* 150 mm wafers
+|-
+| style="background:LightGrey; color:black"|Allowed materials
+|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
+All cleanroom materials except III-V materials
+|-
+|style="background:LightGrey; color:black"|Batch
+|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
+|-
+|}
+<br clear="all" />